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Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) are standard imaging techniques for analyzing semiconductor devices and provide vital tools in your quality control procedure, failure analysis or for research and development.

Both techniques can be applied on cross sections in order to investigate the vertical structure of the devices. The cross sections can be performed in different ways. Using Focus Ion Beam (FIB), often in combination with SEM, in one tool has become the most common preparation technique.

SEM and TEM cross-sectioning is a specialized SGS service. Our experienced staff work with high-performance equipment to provide images in extreme detail when you need a higher resolution image than an optical microscope can provide.

We use SEM and TEM cross-sectioning for many analytical purposes including:

  • Physical failure analysis
  • Construction analysis
  • Reverse engineering

Contact SGS to find out more about how SEM and TEM cross-sectioning can provide a vital tool in the quality control of your products.